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FDN361BN Fiches technique(PDF) 1 Page - Fairchild Semiconductor

No de pièce FDN361BN
Description  30V N-Channel, Logic Level, PowerTrench MOSFET
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDN361BN Fiches technique(HTML) 1 Page - Fairchild Semiconductor

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October 2005
©2005 Fairchild Semiconductor Corporation
FDN361BN Rev A(W)
www.fairchildsemi.com
FDN361BN
30V N-Channel, Logic Level, PowerTrench
®
MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are particularly suited for low voltage
applications in notebook computers, portable phones,
PCMCIA cards, and other battery powered circuits
where fast switching, and low in-line power loss are
needed in a very small outline surface mount package.
Features
• 1.8 A, 30 V.
RDS(ON) = 110 mΩ @ VGS = 10 V
RDS(ON) = 160 mΩ @ VGS = 4.5 V
• Low gate charge
• Industry standard outline SOT-23 surface mount
package using proprietary SuperSOT
TM-3 design for
superior thermal and electrical capabilities
• High performance trench technology for extremely
low RDS(ON)
G
D
S
SuperSOT -3
TM
D
S
G
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
– Continuous
(Note 1a)
1.4
A
– Pulsed
10
Power Dissipation for Single Operation
(Note 1a)
0.5
PD
(Note 1b)
0.46
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
75
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
361B
FDN361BN
7’’
8mm
3000 units


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