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FDN361BN Fiches technique(PDF) 4 Page - Fairchild Semiconductor |
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FDN361BN Fiches technique(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDN361BN Rev A(W) www.fairchildsemi.com Typical Characteristics 0 2 4 6 8 10 00.5 1 1.522.5 3 Qg, GATE CHARGE (nC) ID =1.4A VDS = 10V 15V 20V 0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS COSS CRSS f = 1 MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms 100 μs RDS(ON) LIMIT VGS = 10V SINGLE PULSE RθJA = 270 oC/W TA = 25 oC 10ms 1ms 0 1 2 3 4 5 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJA = 270°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) * RθJA RθJA = 270 oC/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. |
Numéro de pièce similaire - FDN361BN |
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Description similaire - FDN361BN |
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