Moteur de recherche de fiches techniques de composants électroniques
Selected language     French  ▼

Delete All
ON OFF
ALLDATASHEET.FR

X  

Preview PDF Download HTML

UMZ1NT1 Datasheet(Fiches technique) 1 Page - ON Semiconductor

Numéro de pièce UMZ1NT1
Description  Complementary Dual General Purpose Amplifier Transistor
Télécharger  5 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

UMZ1NT1 Datasheet(HTML) 1 Page - ON Semiconductor

  UMZ1NT1 Datasheet HTML 1Page - ON Semiconductor UMZ1NT1 Datenblatt HTML 2Page - ON Semiconductor UMZ1NT1 Datenblatt HTML 3Page - ON Semiconductor UMZ1NT1 Datenblatt HTML 4Page - ON Semiconductor UMZ1NT1 Datenblatt HTML 5Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 1 / 5 page
background image
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 5
Publication Order Number:
UMZ1NT1/D
UMZ1NT1
Complementary Dual
General Purpose
Amplifier Transistor
PNP and NPN Surface Mount
Features
High Voltage and High Current: VCEO = 50 V, IC = 200 mA
High hFE: hFE = 200X400
Moisture Sensitivity Level: 1
ESD Rating − Human Body Model: 3A
ESD Rating − Machine Model: C
Pb−Free Package is Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector−Base Voltage
V(BR)CBO
60
Vdc
Collector−Emitter Voltage
V(BR)CEO
50
Vdc
Emitter−Base Voltage
V(BR)EBO
7.0
Vdc
Collector Current − Continuous
IC
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25
°C
PD
187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
mW/
°C
Thermal Resistance, Junction-to-Ambient
RqJA
670 (Note 1)
490 (Note 2)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25
°C
PD
250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
mW
mW/
°C
Thermal Resistance, Junction-to-Ambient
RqJA
493 (Note 1)
325 (Note 2)
°C/W
Thermal Resistance, Junction-to-Lead
RqJL
188 (Note 1)
208 (Note 2)
°C/W
Junction and Storage Temperature
TJ, Tstg
− 55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
SC−88
CASE 419B
MARKING DIAGRAM
1
3Z = Device Code
M
= Date Code
G
= Pb−Free Package
Device*
Package
Shipping
ORDERING INFORMATION
UMZ1NT1
SC−88
3000 / Tape & Reel
*The “T1” suffix refers to a 7 inch reel.
Q1
(4)
(5)
(6)
(1)
(2)
(3)
Q2
3Z M
G
G
1
UMZ1NT1G
SC−88
(Pb−Free)
3000 / Tape & Reel
(Note: Microdot may be in either location)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com


Html Pages

1  2  3  4  5 


Datasheet Download

Go To PDF Page


Lien URL



Privacy Policy
ALLDATASHEET.FR
AllDATASHEET vous a-t-il été utile ?   [ DONATE ]  

À propos de Alldatasheet   |   Publicit   |   Contactez-nous   |   Politique de confidentialit   |   Echange de liens   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn