TIP112 datasheet(7/8 Pages) ONSEMI

No de pièce	TIP112

Description	Plastic Medium-Power Complementary Silicon Transistors

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Fabricant	ONSEMI [ON Semiconductor]

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TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

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7

Figure 11. Temperature Coefficients

NPN

TIP110, 111, 112

PNP

TIP115, 116, 117

Figure 12. Collector Cut-Off Region

IC, COLLECTOR CURRENT (AMP)

+0.8

0

−0.8

−1.6

−2.4

−3.2

−4.0

−4.8

*APPLIES FOR IC/IB ≤ hFE/3

*

qVC for VCE(sat)

qVC for VBE

0.04 0.06

0.2

0.4 0.6

1.0

2.0

4.0

25

°C to 150°C

−55

°C to 25°C

0.1

25

°C to 150°C

−55

°C to 25°C

IC, COLLECTOR CURRENT (AMP)

+0.8

0

−0.8

−1.6

−2.4

−3.2

−4.0

−4.8

*APPLIES FOR IC/IB ≤ hFE/3

*

qVC for VCE(sat)

qVC for VBE

0.04 0.06

0.2

0.4 0.6

1.0

2.0

4.0

25

°C to 150°C

−55

°C to 25°C

0.1

25

°C to 150°C

−55

°C to 25°C

105

−0.6

103

102

100

104

101

10−1

VBE, BASE-EMITTER VOLTAGE (VOLTS)

−0.4

−0.2

0

+0.2

+0.4 +0.6 +0.8 +1.0

+1.2

VCE = 30 V

TJ = 150°C

100

°C

25

°C

REVERSE

FORWARD

+1.4

105

−0.6

103

102

100

104

101

10−1

VBE, BASE-EMITTER VOLTAGE (VOLTS)

−0.4

−0.2

0

+0.2

+0.4 +0.6

+0.8 +1.0 +1.2

VCE = 30 V

TJ = 150°C

100

°C

25

°C

REVERSE

FORWARD

+1.4

Figure 13. Inductive Load Switching

Note A: Input pulse width is increased until ICM = 0.71 A,

NPN test shown; for PNP test

reverse all polarity and use MJE224 driver.

0.71 A

0 V

−5 V

tw ≈ 3.5 ms (SEE NOTE A)

INPUT

VOLTAGE

COLLECTOR

CURRENT

COLLECTOR

VOLTAGE

VCER

0 V

20 V

100 ms

VCE(sat)

INPUT

MJE254

50

W

50

W

RBB1

2k

W

RBB2

100

W

VBB2 = 0

TUT

VCE MONITOR

100 mH

VCC = 20 V

IC

MONITOR

RS =

0.1

W

TEST CIRCUIT

VOLTAGE AND CURRENT WAVEFORMS

+

−

VBB1 = 10 V

+

−

Numéro de pièce similaire - TIP112

Fabricant	No de pièce	Fiches technique	Description
Mospec Semiconductor	TIP112	146Kb / 3P	POWER TRANSISTORS(2.0A,60-100V,50W)
Savantic, Inc.	TIP112	122Kb / 4P	Silicon NPN Darlington Power Transistors
Central Semiconductor C...	TIP112	97Kb / 2P	Silicon Power darlington Complementary transistors
Motorola, Inc	TIP112	269Kb / 6P	DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
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Fabricant	No de pièce	Fiches technique	Description
Boca Semiconductor Corp...	TIP110	153Kb / 3P	PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
ON Semiconductor	2N6040	152Kb / 6P	Plastic Medium-Power Complementary Silicon Transistors November, 2014 ??Rev. 10
ON Semiconductor	TIP120	144Kb / 7P	Plastic Medium-Power Complementary Silicon Transistors November, 2014 ??Rev. 9
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New Jersey Semi-Conduct...	MJE2100	144Kb / 3P	PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
ON Semiconductor	TIP110	148Kb / 8P	Plastic Medium-Power Complementary Silicon Transistors November, 2014 ??Rev. 8
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	2N6040	114Kb / 8P	Plastic Medium-Power Complementary Silicon Transistors April, 2002 ??Rev. 4
	BDX53B	87Kb / 7P	Plastic Medium-Power Complementary Silicon Transistors February, 2006 ??Rev. 12
New Jersey Semi-Conduct...	MJE1090	143Kb / 3P	PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
ON Semiconductor	TIP120	91Kb / 7P	Plastic Medium-Power Complementary Silicon Transistors September, 2005 ??Rev. 6

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