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TIP110 Fiches technique(PDF) 5 Page - ON Semiconductor |
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TIP110 Fiches technique(HTML) 5 Page - ON Semiconductor |
5 / 8 page TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) http://onsemi.com 5 1.0 Figure 5. TIP115, 116, 117 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 10 4.0 2.0 1.0 0.1 10 60 80 100 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) TJ = 150°C dc 1ms 40 TIP115 TIP116 TIP117 SECONDARY BREAKDOWN LIMITED 5ms CURVES APPLY BELOW RATED VCEO 1.0 Figure 6. TIP110, 111, 112 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 10 4.0 2.0 1.0 0.1 10 80 100 60 TIP110 TIP111 TIP112 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) TJ = 150°C SECONDARY BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO dc ACTIVE−REGION SAFE−OPERATING AREA There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150 _C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 200 0.04 VR, REVERSE VOLTAGE (VOLTS) 10 0.4 0.6 1.0 2.0 40 4.0 0.06 0.1 0.2 70 30 TC = 25°C Cib 50 Cob PNP NPN Figure 7. Capacitance 100 20 6.0 10 20 |
Numéro de pièce similaire - TIP110 |
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Description similaire - TIP110 |
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