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BYV4100 Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce BYV4100
Description  Fast soft-recovery controlled avalanche rectifier
Download  8 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYV4100 Fiches technique(HTML) 2 Page - NXP Semiconductors

  BYV4100 Datasheet HTML 1Page - NXP Semiconductors BYV4100 Datasheet HTML 2Page - NXP Semiconductors BYV4100 Datasheet HTML 3Page - NXP Semiconductors BYV4100 Datasheet HTML 4Page - NXP Semiconductors BYV4100 Datasheet HTML 5Page - NXP Semiconductors BYV4100 Datasheet HTML 6Page - NXP Semiconductors BYV4100 Datasheet HTML 7Page - NXP Semiconductors BYV4100 Datasheet HTML 8Page - NXP Semiconductors  
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1996 Oct 07
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifier
BYV4100
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack
• Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass SOD64 package, using
a high temperature alloyed
construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
ka
,

,

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
100
V
VR
continuous reverse voltage
100
V
IF(AV)
average forward current
Ttp =65 °C; lead length = 10 mm;
averaged over any 20 ms period;
see Fig.2; see also Fig.4
4.0
A
Tamb =60 °C; PCB mounting
(see Fig.12); averaged over any
20 ms period; see Fig.3; see
also Fig.4
1.9
A
IFRM
repetitive peak forward current
Ttp =65 °C; see Fig.6
34
A
Tamb =60 °C; see Fig.7
17
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
90
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
20
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C


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