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BYG80 Fiches technique(PDF) 9 Page - NXP Semiconductors |
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BYG80 Fiches technique(HTML) 9 Page - NXP Semiconductors |
9 / 20 page 1997 Nov 25 9 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYG80 series handbook, full pagewidth 10 0 2 4 6 8 MGL093 10−2 10−1 1 IFRM (A) 10 tP (ms) 102 103 104 0.2 0.5 1 0.1 δ = 0.05 BYG80J Tamb =60 °C; Rth j-a = 100 K/W. VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 600 V. Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. handbook, full pagewidth 0 10 2 4 6 IFRM (A) 8 MGL084 10−2 10−1 110 tp (ms) 102 103 δ = 0.05 0.1 0.2 0.5 1 BYG80A to D Tamb =60 °C; Rth j-a = 150 K/W. VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 200 V. Fig.14 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. |
Numéro de pièce similaire - BYG80 |
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Description similaire - BYG80 |
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