BYG50D datasheet(2/6 Pages) PHILIPS

No de pièce	BYG50D

Description	Controlled avalanche rectifiers

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Fabricant	PHILIPS [NXP Semiconductors]

Site Internet	http://www.nxp.com

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1996 May 24

2

Philips Semiconductors

Preliminary speciﬁcation

Controlled avalanche rectiﬁers

BYG50 series

FEATURES

• Glass passivated

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy

absorption capability

• UL 94V-O classified plastic

package

• Shipped in 12 mm embossed tape.

DESCRIPTION

DO-214AC; SOD106 surface

mountable package with glass

passivated chip.

The well-defined void-free case is of a

transfer-moulded thermo-setting

plastic.

Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.

handbook, 4 columns

MSA474

Top view

Side view

cathode

band

ka

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VRRM

repetitive peak reverse voltage

BYG50D

−

200

V

BYG50G

−

400

V

BYG50J

−

600

V

BYG50K

−

800

V

BYG50M

−

1000

V

VR

continuous reverse voltage

BYG50D

−

200

V

BYG50G

−

400

V

BYG50J

−

600

V

BYG50K

−

800

V

BYG50M

−

1000

V

IF(AV)

average forward current

averaged over any 20 ms

period; Ttp = 100 °C; see Fig.2

−

2.1

A

averaged over any 20 ms

period; Al2O3 PCB mounting (see

Fig.7); Tamb =60 °C; see Fig.3

−

1.0

A

averaged over any 20 ms

period; epoxy PCB mounting

(see Fig.7); Tamb =60 °C;

see Fig.3

−

0.7

A

IFSM

non-repetitive peak forward current

t = 10 ms half sinewave;

Tj =Tj max prior to surge;

VR =VRRMmax

−

30

A

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