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BYD73 Fiches technique(PDF) 4 Page - NXP Semiconductors

No de pièce BYD73
Description  Ultra fast low-loss controlled avalanche rectifiers
Download  11 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYD73 Fiches technique(HTML) 4 Page - NXP Semiconductors

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1996 Sep 18
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm, see Fig.16.
For more information please refer to the
“General Part of associated Handbook”.
Cd
diode capacitance
f = 1 MHz; VR =0V;
see Fig.15
BYD73A to D
50
pF
BYD73E to G
40
pF
maximum slope of reverse recovery
current
when switched from
IF = 1 A to VR ≥ 30 V
and dIF/dt = −1A/µs;
see Fig.17
BYD73A to D
−−
4A/
µs
BYD73E to G
−−
5A/
µs
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
60
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
120
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------


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