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BCP69 Fiches technique(PDF) 1 Page - Fairchild Semiconductor

No de pièce BCP69
Description  PNP General Purpose Amplifier
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

BCP69 Fiches technique(HTML) 1 Page - Fairchild Semiconductor

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©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BCP69 Rev. B
January 2007
BCP69
PNP General Purpose Amplifier
• This device is designed for general purpose medium power amplifiers
and switches requiring collector currents to 1.0A.
• Sourced from Process 77.
Absolute Maximum Ratings* T
a=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150
°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* T
a=25°C unless otherwise noted
* Device mounted on FR-4 PCB 36mm
× 18mm × 1.5mm; mounting pad for the collector lead min. 6cm2
Electrical Characteristics* T
a = 25°C unless otherwise noted
* Pulse Test: Pulse Width
≤ 300µs, Duty Cycle ≤ 2.0%
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
-20
V
VCBO
Collector-Base Voltage
-30
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current
- Continuous
-1.5
A
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature Range
- 55 ~ +150
°C
Symbol
Parameter
Value
Units
PD
Total Device Dissipation
Derate above 25
°C
1.0
8.0
W
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
125
°C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVCEO
Collector-Emitter Breakdown Voltage
IC = -10mA, IB = 0
-20
V
BVCBO
Collector-Base Breakdown Voltage
IC = -1.0mA, IE = 0
-30
V
BVEBO
Emitter-Base Breakdown Voltage
IE = -100µA, IC = 0
-5.0
V
ICBO
Collector-Base Cutoff Current
VCB = -25V, IE = 0
VCB = -25V, IE = 0, Tj = 150
oC
-100
-10
nA
uA
IEBO
Emitter-Base Cutoff Current
VEB = -5.0V, IC = 0
-100
nA
hFE
DC Current Gain
IC = -5mA, VCE = -1.0V
IC = -500mA, VCE = -1.0V
IC = -1.0A, VCE = -1.0V
50
85
60
375
VCE(sat)
Collector-Emitter Saturation Voltage
IC = -1.0A, IB = -100mA
-0.5
V
VBE(on)
Base-Emitter On Voltage
IC = -1.0A, VCE = -1.0V
-1.0
V
Ccb
Collector-Base Capacitance
VCB = -10V, IE = 0, f = 1.0MHz
30
pF
hfe
Small-Signal Current Gain
IC = -50mA, VCE = -10V, f = 20MHz
2.5
SOT-223
1
2
4
3
1. Base 2. Collector 3. Emitter


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