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BYD53D Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BYD53D Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 12 page 1998 Dec 04 3 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD53 series ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. IFRM repetitive peak forward current Tamb =65 °C; see Figs 8 and 9 BYD53D to M − 3.6 A BYD53U and V − 4.45 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj =Tj max prior to surge; VR =VRRMmax − 5A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj =Tj max prior to surge; inductive load switched off − 10 mJ Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.12 −65 +175 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 1 A; Tj =Tj max; see Figs 13 and 14 BYD53D to M −− 2.1 V BYD53U and V −− 1.7 V VF forward voltage IF = 1 A; see Figs 13 and 14 BYD53D to M −− 3.6 V BYD53U and V −− 2.3 V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYD53D 300 −− V BYD53G 500 −− V BYD53J 700 −− V BYD53K 900 −− V BYD53M 1100 −− V BYD53U 1300 −− V BYD53V 1500 −− V IR reverse current VR =VRRMmax; see Fig.15 −− 1 µA VR =VRRMmax; Tj = 165 °C; see Fig.15 −− 100 µA trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.18 BYD53D to J −− 30 ns BYD53K and M −− 75 ns BYD53U and V −− 150 ns Cd diode capacitance f = 1 MHz; VR = 0; see Fig.16 − 20 − pF SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT |
Numéro de pièce similaire - BYD53D |
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Description similaire - BYD53D |
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