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BYD33M Fiches technique(PDF) 4 Page - NXP Semiconductors |
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BYD33M Fiches technique(HTML) 4 Page - NXP Semiconductors |
4 / 12 page 1996 Sep 18 4 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD33 series THERMAL CHARACTERISTICS Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.19. For more information please refer to the “General Part of associated Handbook”. maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1A/µs; see Fig.20 BYD33D to J −− 6A/ µs BYD33K to V −− 5A/ µs SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 60 K/W Rth j-a thermal resistance from junction to ambient note 1 120 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dI R dt -------- |
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Description similaire - BYD33M |
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