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BYD43 Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BYD43 Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 11 page 1996 Jun 05 3 Philips Semiconductors Product specification Fast soft-recovery rectifiers BYD43 series ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.20. For more information please refer to the “General Part of associated Handbook”. IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj =Tj max prior to surge; VR =VRRMmax BYD43U and V − 6A BYD43-16 to 20 − 6A Tstg storage temperature −65 +175 °C Tj junction temperature see Figs 12 and 13 −65 +175 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 1 A; Tj =Tj max; see Figs 14 and 15 BYD43U and V −− 1.20 V BYD43-16 to 20 −− 2.05 V VF forward voltage IF =1A; see Figs 14 and 15 BYD43U and V −− 1.5 V BYD43-16 to 20 −− 2.4 V IR reverse current VR =VRRMmax; see Figs 16 and 17 BYD43U and V −− 1 µA BYD43-16 to 20 −− 5 µA IR reverse current VR =VRRMmax BYD43U and V Tj = 165 °C; see Fig 16 −− 100 µA BYD43-16 to 20 Tj = 125 °C; see Fig 17 −− 50 µA trr reverse recovery time when switched from IF = 0.5 A to IR =1A; measured at IR = 0.25 A; see Fig 22 BYD43U and V −− 250 ns BYD43-16 to 20 −− 300 ns Cd diode capacitance f = 1 MHz; VR =0V; see Figs 18 and 19 BYD43U and V − 20 − pF BYD43-16 to 20 − 15 − pF maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1A/µs; see Fig.21 BYD43U and V −− 5A/ µs BYD43-16 to 20 −− 5A/ µs SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 60 K/W Rth j-a thermal resistance from junction to ambient note 1 120 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT dI R dt -------- |
Numéro de pièce similaire - BYD43 |
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Description similaire - BYD43 |
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