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FCD4N60 Fiches technique(PDF) 4 Page - Fairchild Semiconductor |
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FCD4N60 Fiches technique(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page 4 www.fairchildsemi.com FCD4N60 Rev. B Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *Notes : 1. V GS = 0 V 2. I D = 250μA T J, Junction Temperature [ οC] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *Notes : 1. V GS = 10 V 2. I D = 2.0 A T J, Junction Temperature [ oC] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current 25 50 75 100 125 150 0 1 2 3 4 T C, Case Temperature [ oC] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 us Operation in This Area is Limited by R DS(on) DC 10 ms 1 ms 100 us * Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse V DS, Drain-Source Voltage [V] vs. Case Temperature Figure 11-1. Transient Thermal Response Curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * N ote s : 1. Z θ JC (t ) = 2 .5 oC/W Max. 2. D uty F actor, D = t 1 /t2 3. T JM - T C = P DM * Z θJC (t) single pu lse D= 0.5 0.02 0.2 0.05 0.1 0.01 t 1, S q u ar e W av e P u ls e D u r at ion [ s ec ] t1 PDM t2 |
Numéro de pièce similaire - FCD4N60 |
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Description similaire - FCD4N60 |
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