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MC100EPT25D Fiches technique(PDF) 4 Page - ON Semiconductor

No de pièce MC100EPT25D
Description  ??.3V / ??V Differential ECL to 3.3V LVTTL Translator
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC100EPT25D Fiches technique(HTML) 4 Page - ON Semiconductor

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MC100EPT25
http://onsemi.com
4
Table 6. AC CHARACTERISTICS VCC = 3.0 V to 3.6 V; VEE = −5.5 V to −3.0 V; GND = 0.0 V (Note 4)
Symbol
Characteristic
−40°C
25°C
85°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
fmax
Maximum Frequency
(See Figure 2 Fmax/JITTER)
275
275
275
MHz
tPLH, tPHL Propagation Delay to Output Differential
(Cross−Point to 1.5 V)
500
950
1300
800
950
1600
800
960
1600
ps
tSKPP
Device−to−Device Skew (Note 5)
500
500
500
ps
tJITTER
Random Clock Jitter (RMS)
(See Figure 2 Fmax/JITTER)
0.2
< 1
0.2
< 1
0.2
< 1
ps
VPP
Input Voltage Swing (Differential)
150
800
1200
150
800
1200
150
800
1200
mV
tr
tf
Output Rise/Fall Times
Q, Q
(0.8 V − 2.0 V)
300
900
474
1160
600
1400
300
900
459
1100
600
1400
300
900
457
1100
600
1400
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
4. Measured with a 750 mV 50% duty−cycle clock source. RL = 500 W to GND and CL = 20 pF to GND. Refer to Figure 3.
5. Skews are measured between outputs under identical conditions.
0
400
800
1200
1600
2000
2400
2800
25
100
175
250
325
400
475
550
625
1
2
3
4
5
6
7
Figure 2. Fmax/Jitter
FREQUENCY (MHz)
(JITTER)
VOH
VOL  0.5 V


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