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BY228 Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce BY228
Description  Damper diode
Download  7 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BY228 Fiches technique(HTML) 2 Page - NXP Semiconductors

  BY228 Datasheet HTML 1Page - NXP Semiconductors BY228 Datasheet HTML 2Page - NXP Semiconductors BY228 Datasheet HTML 3Page - NXP Semiconductors BY228 Datasheet HTML 4Page - NXP Semiconductors BY228 Datasheet HTML 5Page - NXP Semiconductors BY228 Datasheet HTML 6Page - NXP Semiconductors BY228 Datasheet HTML 7Page - NXP Semiconductors  
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1996 Sep 26
2
Philips Semiconductors
Product specification
Damper diode
BY228
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Available in ammo-pack
• Also available with preformed leads
for easy insertion.
APPLICATIONS
• Damper diode in high frequency
horizontal deflection circuits up to
16 kHz.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
ka
,

,

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj =25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRSM
non-repetitive peak reverse voltage
1650
V
VRRM
repetitive peak reverse voltage
1650
V
VR
continuous reverse voltage
1500
V
IFWM
working peak forward current
Tamb =75 °C; PCB mounting (see
Fig.4); see Fig.2
5A
IFRM
repetitive peak forward current
10
A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave;
Tj =Tj max prior to surge;
VR =VRRMmax
50
A
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF = 5 A; Tj =Tj max; see Fig.3
1.4
V
IF = 5 A; see Fig.3
1.5
V
IR
reverse current
VR =VRmax; Tj = 150 °C
150
µA
trr
reverse recovery time
when switched from IF = 0.5 A to IR =1A;
measured at IR = 0.25 A; see Fig.6
1
µs
tfr
forward recovery time
when switched to IF = 5 A in 50 ns;
Tj =Tj max; Fig.7
1
µs


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