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MMBT5088 Fiches technique(PDF) 1 Page - Unisonic Technologies |
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MMBT5088 Fiches technique(HTML) 1 Page - Unisonic Technologies |
1 / 6 page UTC MMBT5088 / MMBT5089 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R206-033,A NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 µA to 50mA. MARKING(MMBT5088) MARKING(MMBT5089) SOT-23 1 2 3 1:EMITTER 2:BASE 3:COLLECTOR MAXIMUM RATINGS (TA=25°C, unless otherwise noted) RATING SYMBOL MMBT5088 MMBT5089 UNIT Collector-Emitter voltage VCEO 30 25 V Collector-Base voltage VCBO 35 30 V Emitter-base voltage VEBO 4.5 V Collector current-continuous Ic 100 mA Operating and Storage Junction Temperature Range Tj, Tstg -55 ~ +150 °C Note 1: These ratings are based on a maximum junction temperature of 150 degrees C. Note 2: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. THERMAL CHARACTERISTICS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL MAX UNIT Total Device Dissipation Derate above 25 °C PD 350 2.8 mW mW/ °C Thermal Resistance, Junction to Ambient RθJA 357 °C/W 1Q 1R |
Numéro de pièce similaire - MMBT5088 |
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Description similaire - MMBT5088 |
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