2SK2094_1 datasheet(3/5 Pages) ROHM

No de pièce	2SK2094

Description	4V Drive Nch MOS FET

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Fabricant	ROHM [Rohm]

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2SK2094

Transistors

Rev.A

3/4

Electrical characteristics curve

0.1 0.2

0.5

1

2

5

10 20

50 100

0.01

0.02

0.05

0.1

0.2

0.5

1

2

5

10

Tc

=25°C

Single pulse

DRAIN-SOURCE VOLTAGE : VDS (V)

Fig.1 Maximum Safe Operating Area

P

W =10ms

DC

Operation

5

4

3

2

1

0

4

3

2

1

0

10V

8V

6V

4V

VGS

=3V

Ta

=25

°C

Pulsed

DRAIN-SOURCE VOLTAGE : VDS (V)

Fig.2 Typical Output Characteristics

2

0

5

2

1

0.5

0.2

0.1

0.05

0.02

0.01

0.005

1

3

4

567

8

VDS

=10V

Pulsed

Ta

=125°C

75

°C

−25°C

25

°C

GATE-SOURCE VOLTAGE : VGS (V)

Fig.3 Typical Transfer Characteristics

−50

25

4

015

25

0.005 0.01 0.02

0.05 0.1 0.2

0.5

1

0.01

0.02

0.05

0.1

0.2

0.5

1

2

5

10

VGS

=10V

Pulsed

Ta

=125°C

75

°C

−25°C

25

°C

DRAIN CURRENT : I D (A)

Fig.5 Static Drain-Source On-State Resistance

Fig.5 vs. Drain Current (

Ι )

0.005

0.2

2

5

10

0.01

5

0.05 0.1

0.5

1

0.5

0.2

0.1

0.05

0.01

0.02

1

2

VGS

=4V

Pulsed

Ta

=125°C

75

°C

−25°C

25

°C

DRAIN CURRENT : I D (A)

Fig.6 Static Drain-Source On-State Resistance

Fig.6 vs. Drain Current (

ΙΙ )

0

3

2

1

0

−25

50

75

100 125

VDS

=10V

lD

=1mA

CHANNEL TEMPERATURE : Tch

(

°C)

Fig.4 Gate Threshold Voltage

Fig.4 vs. Channel Temperature

5

020

10

15

0

0.1

0.2

0.3

0.4

0.5

0.6

ID

=2A

1A

Ta

=25

°C

Pulsed

Fig.7 Static Drain-Source On-State Resistance

Fig.7 vs. Gate-Source Voltage

GATE-SOURCE VOLTAGE : VGS (V)

0

−50

150

50

100

0

0.1

0.3

0.4

0.5

0.6

−25

25

75

125

0.2

0.7

0.8

Pulsed

VGS

=10V

ID

=1A

Fig.8 Static Drain-Source On-State Resistance

Fig.8 vs. Channel Temperature

CHANNEL TEMPERATURE : Tch

(

°C)

25

0.005 0.01 0.02 0.05 0.1 0.2

0.5

1

0.01

0.02

0.05

0.1

0.2

0.5

1

2

5

10

VDS

=10V

Pulsed

Ta

= −25°C

25

°C

125

°C

75

°C

DRAIN CURRENT : I D (A)

Fig.9 Forward Transfer Admittance

Fig.9 vs. Drain Current

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