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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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2SD1803-TM3-T Fiches technique(PDF) 2 Page - Unisonic Technologies |
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2SD1803-TM3-T Fiches technique(HTML) 2 Page - Unisonic Technologies |
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2 / 5 page  2SD1803 NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 www.unisonic.com.tw QW-R213-007,B ABSOLUATE MAXIUM RATINGS (Ta = 25℃) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V DC IC 5 A Collector Current PULSE ICM 8 A Tc=25℃ 20 W Power Dissipation Ta=25℃ PD 1 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=10µA, IE=0 60 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA, RBE=∞ 50 V Emitter-Base Breakdown Voltage BVEBO IE=10µA, IC=0 6 V Collector Cutoff Current ICBO VCB=40V, IE=0 1 µA Emitter Cutoff Current IEBO VEB=4V, IC=0 1 µA hFE1 VCE=2V, IC=0.5A 70 400 DC Current Gain hFE2 VCE=2V, IC=4A 35 Gain-Bandwidth Product fT VCE=5V, Ic=1A 180 MHz Output Capacitance Cob VCB=10V, f=1MHz 40 pF C-E Saturation Voltage VCE(sat) IC=3A, IB=0.15A 220 400 mV B-E Saturation Voltage VBE(sat) IC=3A, IB=0.15A 0.95 1.3 V Turn-on Time tON See Test Circuit 50 ns Storage Time tS See Test Circuit 500 ns Fall Time tF See Test Circuit 20 ns CLASSIFICATION OF hFE 1 RANK Q R S T RANGE 70 ~ 140 100 ~ 200 140 ~ 280 200 ~ 400 |
Numéro de pièce similaire - 2SD1803-TM3-T |
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Description similaire - 2SD1803-TM3-T |
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