Moteur de recherche de fiches techniques de composants électroniques
  French  ▼

Delete All
ON OFF
ALLDATASHEET.FR

X  

Preview PDF Download HTML

MC74HC86A Fiches technique(PDF) 4 Page - ON Semiconductor

No de pièce MC74HC86A
Description  Quad 2−Input Exclusive OR Gate High−Performance Silicon−Gate CMOS
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC74HC86A Fiches technique(HTML) 4 Page - ON Semiconductor

  MC74HC86A_06 Datasheet HTML 1Page - ON Semiconductor MC74HC86A_06 Datasheet HTML 2Page - ON Semiconductor MC74HC86A_06 Datasheet HTML 3Page - ON Semiconductor MC74HC86A_06 Datasheet HTML 4Page - ON Semiconductor MC74HC86A_06 Datasheet HTML 5Page - ON Semiconductor MC74HC86A_06 Datasheet HTML 6Page - ON Semiconductor MC74HC86A_06 Datasheet HTML 7Page - ON Semiconductor MC74HC86A_06 Datasheet HTML 8Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 4 / 8 page
background image
MC74HC86A
http://onsemi.com
4
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Unit
Guaranteed Limit
VCC
V
Test Conditions
Parameter
Symbol
Unit
v 125_C
v 85_C
– 55 to
25_C
VCC
V
Test Conditions
Parameter
Symbol
Iin
Maximum Input Leakage Current Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
mA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0 mA
6.0
1.0
10
40
mA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input t, = tf = 6 ns)
Symbol
Parameter
VCC
V
Guaranteed Limit
Unit
– 55 to
25_C
v 85_C
v 125_C
tPLH,
tPHL
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 2)
2.0
3.0
4.5
6.0
100
80
20
17
125
90
25
21
150
110
31
26
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
2.0
3.0
4.5
6.0
75
30
15
13
95
40
19
16
110
55
22
19
ns
Cin
Maximum Input Capacitance
10
10
10
pF
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
CPD
Power Dissipation Capacitance (Per Gate)*
Typical @ 25°C, VCC = 5.0 V
pF
33
* Used to determine the no−load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE
UNDER
TEST
OUTPUT
Figure 1. Switching Waveforms
Figure 2. Test Circuit
OUTPUT Y
INPUT
A OR B
90%
50%
10%
tTLH
tTHL
tPLH
tPHL
tr
tf
GND
VCC
90%
50%
10%
A
B
Y
Figure 3. Expanded Logic Diagram
(1/4 of Device)


Html Pages

1  2  3  4  5  6  7  8 


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn