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MC74HC00A Fiches technique(PDF) 4 Page - ON Semiconductor

No de pièce MC74HC00A
Description  Quad 2−Input NAND Gate High−Performance Silicon−Gate CMOS
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC74HC00A Fiches technique(HTML) 4 Page - ON Semiconductor

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DC CHARACTERISTICS (Voltages Referenced to GND)
VCC
V
Guaranteed Limit
Symbol
Parameter
Condition
−55 to 25°C
≤85°C
≤125°C
Unit
VIH
Minimum High−Level Input
Voltage
Vout = 0.1V or VCC −0.1V
|Iout| ≤ 20mA
2.0
3.0
4.5
6.0
1.50
2.10
3.15
4.20
1.50
2.10
3.15
4.20
1.50
2.10
3.15
4.20
V
VIL
Maximum Low−Level Input
Voltage
Vout = 0.1V or VCC − 0.1V
|Iout| ≤ 20mA
2.0
3.0
4.5
6.0
0.50
0.90
1.35
1.80
0.50
0.90
1.35
1.80
0.50
0.90
1.35
1.80
V
VOH
Minimum High−Level Output
Voltage
Vin = VIH or VIL
|Iout| ≤ 20mA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin =VIH or VIL
|Iout| ≤ 2.4mA
|Iout| ≤ 4.0mA
|Iout| ≤ 5.2mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.20
3.70
5.20
VOL
Maximum Low−Level Output
Voltage
Vin = VIH or VIL
|Iout| ≤ 20mA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or VIL
|Iout| ≤ 2.4mA
|Iout| ≤ 4.0mA
|Iout| ≤ 5.2mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.40
0.40
0.40
Iin
Maximum Input Leakage
Current
Vin = VCC or GND
6.0
±0.1
±1.0
±1.0
mA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0mA
6.0
1.0
10
40
mA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).
AC CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
VCC
V
Guaranteed Limit
Symbol
Parameter
−55 to 25°C
≤85°C
≤125°C
Unit
tPLH,
tPHL
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 2)
2.0
3.0
4.5
6.0
75
30
15
13
95
40
19
16
110
55
22
19
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
2.0
3.0
4.5
6.0
75
27
15
13
95
32
19
16
110
36
22
19
ns
Cin
Maximum Input Capacitance
10
10
10
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
CPD
Power Dissipation Capacitance (Per Buffer)*
Typical @ 25°C, VCC = 5.0 V, VEE = 0 V
pF
22
* Used to determine the no−load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).


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