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2SA1012-O-TA3-T Datasheet(Fiches technique) 2 Page - Unisonic Technologies

Numéro de pièce 2SA1012-O-TA3-T
Description  HIGH CURRENT SWITCHING APPLICATION
Télécharger  4 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SA1012-O-TA3-T Datasheet(HTML) 2 Page - Unisonic Technologies

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2SA1012
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R203-015,E
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-50
V
Collector-Emitter Voltage
VEBO
-5
V
Peak Collector Current
IC
-5
A
Power Dissipation
PD
25
W
Junction Temperature
TJ
150
Storage Temperature
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25 ,
℃ unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=-100µA, IE=0
-60
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=-10mA, IB=0
-50
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-100µA, IC=0
-5
V
Collector Cut-off Current
ICBO
VCB=-50V, IE=0
-1.0
µA
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
-1.0
µA
hFE1
VCE=-1V, IC=-1A
70
240
DC Current Gain
hFE2
VCE=-1V, IC=-3A
30
Collector-Emitter Saturation Voltage
VCE (SAT) IC=-3A, IB=-0.15A
-0.2
-0.4
V
Base-Emitter Saturation Voltage
VBE (SAT)
IC=-3A, IB=-0.15A
-0.9
-1.2
V
Transition frequency
fT
VCE=-4V, IC=-1A
60
MHz
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
170
pF
Turn-on time
tON
0.1
µs
Storage time
tS
1.0
µs
Switching time
Fall time
tF
0.1
µs
CLASSIFICATION of hFE1
RANK
O
Y
RANGE
70 ~ 140
120 ~ 240


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