MV209 datasheet(2/4 Pages) ONSEMI

No de pièce	MV209

Description	Silicon Epicap Diodes

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MMBV109LT1, MV209

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Ct, Diode Capacitance

VR = 3.0 Vdc, f = 1.0 MHz

pF

Q, Figure of Merit

VR = 3.0 Vdc

f = 50 MHz

CR, Capacitance Ratio

C3/C25

f = 1.0 MHz (Note 1)

Device

Package

Shipping†

Min

Nom

Max

Min

Max

MMBV109LT1

SOT−23

3,000 / Tape & Reel

26

29

32

200

5.0

6.5

MMBV109LT1G

SOT−23

(Pb−Free)

3,000 / Tape & Reel

MMBV109LT3

SOT−23

10,000 / Tape & Reel

MMBV109LT3G

SOT−23

(Pb−Free)

10,000 / Tape & Reel

MV209

TO−92

1,000 Units / Bag

MV209G

TO−92

(Pb−Free)

1,000 Units / Bag

1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc.

Figure 1. DIODE CAPACITANCE

40

32

24

16

8

0

1

3

10

30

100

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. FIGURE OF MERIT

f, FREQUENCY (MHz)

Figure 3. LEAKAGE CURRENT

TA, AMBIENT TEMPERATURE

Figure 4. DIODE CAPACITANCE

TA, AMBIENT TEMPERATURE

10

1000

100

10

100

1000

100

−60

0.01

0.001

0

+40

+100

1.04

−75

1.02

1.00

0.98

0.96

−25

+25

+75

+125

VR = 3.0 Vdc

f = 1.0 MHz

Ct [ Cc + Cj

36

28

20

12

4

f = 1.0 MHz

TA = 25°C

VR = 3 Vdc

TA = 25°C

VR = 20 Vdc

+120 +140

+80

+60

+20

−40

−20

0.1

1.0

10

20

2.0

0.2

0.02

0.002

0.006

0.06

0.6

6.0

60

−50

0

+50

+100

1.03

1.01

0.99

0.97

NOTES ON TESTING AND SPECIFICATIONS

Numéro de pièce similaire - MV209

Fabricant	No de pièce	Fiches technique	Description
Leshan Radio Company	MV209	146Kb / 2P	Silicon Epicap Diode
ON Semiconductor	MV209	69Kb / 8P	Silicon Epicap Diodes March, 2001 ??Rev. 1

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Description similaire - MV209

Fabricant	No de pièce	Fiches technique	Description
ON Semiconductor	MMVL109T1	45Kb / 3P	Silicon Epicap Diodes February, 2006 ??Rev. 1
ON Semiconductor	MBV109T1	69Kb / 8P	Silicon Epicap Diodes March, 2001 ??Rev. 1
Leshan Radio Company	MMVL109T1	40Kb / 2P	Silicon Epicap Diode
Leshan Radio Company	MMBV109LT1	146Kb / 2P	Silicon Epicap Diode
Littelfuse	PP6KE6.8	406Kb / 5P	Silicon Avalanche Diodes - Silicon Avalanche Diodes
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Microsemi Corporation	JAN1N645-1	177Kb / 3P	Silicon Rectifier Diodes
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MV209 Fiches technique(PDF) 2 Page - ON Semiconductor

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