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MMBT6589T1 Fiches technique(PDF) 2 Page - ON Semiconductor

No de pièce MMBT6589T1
Description  High Current Surface Mount PNP Silicon Switching Transistor for Switching Transistor for Portable Applications
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
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MMBT6589T1 Fiches technique(HTML) 2 Page - ON Semiconductor

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MMBT6589T1
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
−30
Vdc
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
−50
Vdc
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
−5.0
Vdc
Collector Cutoff Current
(VCB = −30 Vdc, IE = 0)
ICBO
−0.1
mAdc
Collector−Emitter Cutoff Current
(VCES = −30 Vdc)
ICES
−0.1
mAdc
Emitter Cutoff Current
(VEB = −4.0 Vdc)
IEBO
−0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 4) (Figure 1)
(IC = −1.0 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = 2.0 A, VCE = −2.0 V)
hFE
100
100
80
40
300
Collector −Emitter Saturation Voltage (Note 4) (Figure 3)
(IC = −0.5 A, IB = −0.05 A)
(IC = −1.0 A, IB = 0.1 A)
(IC = −2.0 A, IB = −0.2 A)
VCE(sat)
−0.25
−0.30
−0.65
V
Base −Emitter Saturation Voltage (Note 4) (Figure 2)
(IC = −1.0 A, IB = −0.1 A)
VBE(sat)
−1.2
V
Base −Emitter Turn−on Voltage (Note 4)
(IC = −1.0 A, VCE = −2.0 V)
VBE(on)
−1.1
V
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
fT
100
MHz
Output Capacitance (VCB = −5.0 V, f = 1.0 MHz)
Cobo
20
pF
4. Pulsed Condition: Pulse Width = 300
msec, Duty Cycle ≤ 2%


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