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MC100EP52DR2 Fiches technique(PDF) 6 Page - ON Semiconductor

No de pièce MC100EP52DR2
Description  3.3V / 5V ECL Differential Data and Clock D Flip?묯lop
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC100EP52DR2 Fiches technique(HTML) 6 Page - ON Semiconductor

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MC10EP52, MC100EP52
http://onsemi.com
6
Table 10. 100EP DC CHARACTERISTICS, NECL VCC = 0 V, VEE = −5.5 V to −3.0 V (Note 17)
−40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
20
34
44
20
35
45
20
37
47
mA
VOH
Output HIGH Voltage (Note 18)
−1145 −1020
−895
−1145 −1020
−895
−1145 −1020
−895
mV
VOL
Output LOW Voltage (Note 18)
−1945 −1820 −1695 −1945 −1820 −1695 −1945 −1820 −1695
mV
VIH
Input HIGH Voltage (Single−Ended)
−1225
−880
−1225
−880
−1225
−880
mV
VIL
Input LOW Voltage (Single−Ended)
−1945
−1625 −1945
−1625 −1945
−1625
mV
VIHCMR
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 19)
VEE+2.0
0.0
VEE+2.0
0.0
VEE+2.0
0.0
V
IIH
Input HIGH Current
150
150
150
mA
IIL
Input LOW Current
0.5
0.5
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
17.Input and output parameters vary 1:1 with VCC.
18.All loading with 50 W to VCC − 2.0 V.
19.VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.
Table 11. AC CHARACTERISTICS VCC = 0 V; VEE = −3.0 V to −5.5 V or VCC = 3.0 V to 5.5 V; VEE = 0 V (Note 20)
−40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
VOUTpp
Output Voltage Amplitude @ 3.0 GHz
(Figure 2)
630
750
610
730
520
640
GHz
tPLH,
tPHL
Propagation Delay to
Output Differential
CLK, CLK−>Q, Q
250
300
350
280
330
380
310
360
410
ps
tS
tH
Setup Time
Hold Time
50
0
50
0
50
0
ps
tJITTER
CLOCK Random Jitter (RMS)
(Figure 2)
0.2
1
0.2
1
0.2
1
ps
VPP
Input Voltage Swing
(Differential Configuration)
150
800
1200
150
800
1200
150
800
1200
mV
tr
tf
Output Rise/Fall Times
(20% − 80%)
Q, Q
70
110
170
80
120
180
90
130
200
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
20.Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to VCC − 2.0 V.


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