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MJD243 Fiches technique(PDF) 3 Page - ON Semiconductor

No de pièce MJD243
Description  Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJD243 Fiches technique(HTML) 3 Page - ON Semiconductor

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MJD243 (NPN), MJD253 (PNP)
http://onsemi.com
3
25
25
T, TEMPERATURE (
°C)
0
50
75
100
125
150
15
10
TC
5
20
2.5
0
1.5
1
TA
0.5
2
TC
TA (SURFACE MOUNT)
Figure 1. Power Derating
Figure 2. Active Region Maximum
Safe Operating Area
10
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.01
100
2
5
0.1
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
500
ms
dc
1
1ms
50
20
10
5
2
1
100
ms
0.02
0.05
0.2
0.5
5ms
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the
transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits
are valid for duty cycles to 10% provided TJ(pk) v 150°C. TJ(pk) may be calculated from the data in Figure 3. At high case
temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by
second breakdown.
t, TIME (ms)
0.01
0.02
0.05
1
2
5
10
20
50
100
200
0.1
0.5
0.2
1
0.2
0.1
0.05
RqJC(t) = r(t) qJC
RqJC = 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
0.5
D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0 (SINGLE PULSE)
Figure 3. Thermal Response
0.1
0.02
0.01


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