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MJD243 Fiches technique(PDF) 2 Page - ON Semiconductor

No de pièce MJD243
Description  Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJD243 Fiches technique(HTML) 2 Page - ON Semiconductor

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MJD243 (NPN), MJD253 (PNP)
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Base Voltage
VCB
100
Vdc
Collector−Emitter Voltage
VCEO
100
Vdc
Emitter−Base Voltage
VEB
7.0
Vdc
Collector Current
−Continuous
−Peak
IC
4.0
8.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
12.5
0.1
W
W/
°C
Total Device Dissipation @ TA = 25°C (Note 1)
Derate above 25
°C
PD
1.4
0.011
W
W/
°C
Operating and Storage Junction Temperature Range
TJ, Tstg
−65 to + 150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient (Note 2)
RqJC
RqJA
10
89.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. When surface mounted on minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 10 mAdc, IB = 0)
VCEO(sus)
100
Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TJ = 125°C)
ICBO
100
100
nAdc
mAdc
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
100
nAdc
DC Current Gain (Note 3)
(IC = 200 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
hFE
40
15
180
Collector−Emitter Saturation Voltage (Note 3)
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat)
0.3
0.6
Vdc
Base−Emitter Saturation Voltage (Note 3)
(IC = 2.0 Adc, IB = 200 mAdc)
VBE(sat)
1.8
Vdc
Base−Emitter On Voltage (Note 3)
(IC = 500 mAdc, VCE = 1.0 Vdc)
VBE(on)
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
fT
40
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
50
pF
2. When surface mounted on minimum pad sizes recommended.
3. Pulse Test: Pulse Width = 300
ms, Duty Cycle [ 2%.
4. fT = ⎪hFE⎪• ftest.


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