Moteur de recherche de fiches techniques de composants électroniques
  French  ▼

Delete All
ON OFF
ALLDATASHEET.FR

X  

Preview PDF Download HTML

MJD243 Fiches technique(PDF) 1 Page - ON Semiconductor

No de pièce MJD243
Description  Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJD243 Fiches technique(HTML) 1 Page - ON Semiconductor

  MJD243_07 Datasheet HTML 1Page - ON Semiconductor MJD243_07 Datasheet HTML 2Page - ON Semiconductor MJD243_07 Datasheet HTML 3Page - ON Semiconductor MJD243_07 Datasheet HTML 4Page - ON Semiconductor MJD243_07 Datasheet HTML 5Page - ON Semiconductor MJD243_07 Datasheet HTML 6Page - ON Semiconductor MJD243_07 Datasheet HTML 7Page - ON Semiconductor MJD243_07 Datasheet HTML 8Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 1 / 8 page
background image
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 10
1
Publication Order Number:
MJD243/D
MJD243 (NPN),
MJD253 (PNP)
Preferred Device
Complementary Silicon
Plastic Power Transistor
DPAK−3 for Surface Mount Applications
Designed for low voltage, low−power, high−gain audio amplifier
applications.
Features
Collector−Emitter Sustaining Voltage −
VCEO(sus) = 100 Vdc (Min) @ IC
= 10 mAdc
High DC Current Gain −
hFE = 40 (Min) @ IC
= 200 mAdc
= 15 (Min) @ IC = 1.0 Adc
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 0.3 Vdc (Max) @ IC
= 500 mAdc
= 0.6 Vdc (Max) @ IC = 1.0 Adc
High Current−Gain − Bandwidth Product −
fT = 40 MHz (Min) @ IC
= 100 mAdc
Annular Construction for Low Leakage −
ICBO = 100 nAdc @ Rated VCB
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C
u 400 V
Pb−Free Packages are Available
DPAK−3
CASE 369D
STYLE 1
4.0 A, 100 V, 12.5 W
POWER TRANSISTOR
MARKING DIAGRAMS
Y
= Year
WW
= Work Week
x
= 4 or 5
G
= Pb−Free Package
DPAK−3
CASE 369C
STYLE 1
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
YWW
J2x3G
1 2
3
4
1
2
3
Base
Collector
Emitter
4
YWW
J253G


Html Pages

1  2  3  4  5  6  7  8 


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn