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MBT35200MT1 Fiches technique(PDF) 2 Page - ON Semiconductor

No de pièce MBT35200MT1
Description  High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MBT35200MT1 Fiches technique(HTML) 2 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
−35
−45
Vdc
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
−55
−65
Vdc
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
−5.0
−7.0
Vdc
Collector Cutoff Current
(VCB = −35 Vdc, IE = 0)
ICBO
−0.03
−0.1
mAdc
Collector−Emitter Cutoff Current
(VCES = −35 Vdc)
ICES
−0.03
−0.1
mAdc
Emitter Cutoff Current
(VEB = −4.0 Vdc)
IEBO
−0.01
−0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = −1.0 A, VCE = −1.5 V)
(IC = −1.5 A, VCE = −1.5 V)
(IC = −2.0 A, VCE = −3.0 V)
hFE
100
100
100
200
200
200
400
Collector −Emitter Saturation Voltage (Note 1.)
(IC = −0.8 A, IB = −0.008 A)
(IC = −1.2 A, IB = −0.012 A)
(IC = −2.0 A, IB = −0.02 A)
VCE(sat)
−0.125
−0.175
−0.260
−0.15
−0.20
−0.31
V
Base −Emitter Saturation Voltage (Note 1.)
(IC = −1.2 A, IB = −0.012 A)
VBE(sat)
−0.68
−0.85
V
Base −Emitter Turn−on Voltage (Note 1.)
(IC = −2.0 A, VCE = −3.0 V)
VBE(on)
−0.81
−0.875
V
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
fT
100
MHz
Input Capacitance (VEB = −0.5 V, f = 1.0 MHz)
Cibo
600
650
pF
Output Capacitance (VCB = −3.0 V, f = 1.0 MHz)
Cobo
85
100
pF
Turn−on Time (VCC = −10 V, IB1 = −100 mA, IC = −1 A, RL = 3 W)
ton
35
nS
Turn−off Time (VCC = −10 V, IB1 = IB2 = −100 mA, IC = 1 A, RL = 3 W)
toff
225
nS
1. Pulsed Condition: Pulse Width = 300
msec, Duty Cycle ≤ 2%


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