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BUB323Z Fiches technique(PDF) 5 Page - ON Semiconductor

No de pièce BUB323Z
Description  NPN Silicon Power Darlington High Voltage Autoprotected D2PAK for Surface Mount
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BUB323Z Fiches technique(HTML) 5 Page - ON Semiconductor

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Figure 5. DC Current Gain
IC, COLLECTOR CURRENT (MILLIAMPS)
10000
1000
100
10
100
1000
10000
TJ = 125°C
25
°C
−40
°C
VCE = 1.5 V
Figure 6. DC Current Gain
IC, COLLECTOR CURRENT (MILLIAMPS)
100000
1000
100
10
100
1000
10000
TYPICAL
VCE = 5 V, TJ = 25°C
10000
TYP + 6
Σ
TYP − 6
Σ
Figure 7. Collector Saturation Region
IB, BASE CURRENT (MILLIAMPS)
100
10
1
0
2.5
4.0
5.0
TJ = 25°C
IC = 3 A
4.5
2.0
3.5
3.0
1.0
0.5
1.5
5 A
7 A
8 A
10 A
Figure 8. Collector−Emitter Saturation Voltage
IC, COLLECTOR CURRENT (AMPS)
10
1
0.1
0.4
1.4
2.0
2.4
2.2
1.2
1.8
1.6
0.8
0.6
1.0
TJ = 125°C
25
°C
IC/IB = 150
Figure 9. Base−Emitter Saturation Voltage
IC, COLLECTOR CURRENT (AMPS)
10
1
0.1
0.8
1.8
2.0
1.4
1.6
1.2
1.0
Figure 10. Base−Emitter “ON” Voltages
IC, COLLECTOR CURRENT (AMPS)
10
1
0.1
0.6
1.4
1.8
2.0
1.2
1.6
0.8
1.0
IC/IB = 150
TJ = 25°C
125
°C
VCE = 2 VOLTS
TJ = 25°C
125
°C


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