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BC558BZL1 Fiches technique(PDF) 1 Page - ON Semiconductor

No de pièce BC558BZL1
Description  Amplifier Transistors PNP Silicon
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Site Internet  http://www.onsemi.com
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© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 2
1
Publication Order Number:
BC556B/D
BC556B, BC557A, B, C,
BC558B, C
Amplifier Transistors
PNP Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector - Emitter Voltage
BC556
BC557
BC558
VCEO
−65
−45
−30
Vdc
Collector - Base Voltage
BC556
BC557
BC558
VCBO
−80
−50
−30
Vdc
Emitter - Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
Collector Current − Peak
IC
ICM
−100
−200
mAdc
Base Current − Peak
IBM
−200
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
W
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance,
Junction−to−Case
RqJC
83.3
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
BC55x
= Device Code
x = 6, 7, or 8
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
TO−92
CASE 29
STYLE 17
3
2
1
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
BC
55xx
AYWW
G
G
MARKING DIAGRAM


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