BC618G datasheet(2/6 Pages) ONSEMI

No de pièce	BC618G

Description	Darlington Transistors NPN Silicon

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BC618

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage

(IC = 10 mAdc, VBE = 0)

V(BR)CEO

55

−

Vdc

Collector −Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

V(BR)CBO

80

−

Vdc

Emitter −Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

12

−

Vdc

Collector Cutoff Current

(VCE = 60 Vdc, VBE = 0)

ICES

−

50

nAdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

ICBO

−

50

nAdc

Emitter Cutoff Current

(VEB = 10 Vdc, IC = 0)

IEBO

−

50

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 200 mA, IB = 0.2 mA)

VCE(sat)

−

1.1

Vdc

Base −Emitter Saturation Voltage

(IC = 200 mA, IB = 0.2 mA)

VBE(sat)

−

1.6

Vdc

DC Current Gain

(IC = 100 mA, VCE = 5.0 Vdc)

(IC = 10 mA, VCE = 5.0 Vdc)

(IC = 200 mA, VCE = 5.0 Vdc)

(IC = 1.0 A, VCE = 5.0 Vdc)

hFE

2000

4000

10000

4000

−

50000

−

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 500 mA, VCE = 5.0 Vdc, P = 100 MHz)

fT

150

−

MHz

Output Capacitance

(VCB = 10 V, IE = 0, f = 1.0 MHz)

Cob

−

4.5

7.0

pF

Input Capacitance

(VEB = 5.0 V, IE = 0, f = 1.0 MHz)

Cib

−

5.0

9.0

pF

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

Numéro de pièce similaire - BC618G

Fabricant	No de pièce	Fiches technique	Description
Motorola, Inc	BC618	208Kb / 6P	Darlington Transistors
ON Semiconductor	BC618	150Kb / 6P	Darlington Transistors(NPN Silicon) 1996
NXP Semiconductors	BC618	44Kb / 7P	NPN Darlington transistor 2004 Nov 05
Siemens Semiconductor G...	BC618	142Kb / 5P	NPN Silicon Darlington Transistors (High current gain High collector current)
NXP Semiconductors	BC618	54Kb / 7P	NPN Darlington transistor 2004 Nov 05

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Description similaire - BC618G

Fabricant	No de pièce	Fiches technique	Description
Infineon Technologies A...	BCV27	49Kb / 5P	NPN Silicon Darlington Transistors Jul-12-2001
Central Semiconductor C...	MPSA28	540Kb / 3P	SILICON NPN DARLINGTON TRANSISTORS
Infineon Technologies A...	BSP50-BSP52	570Kb / 8P	NPN Silicon Darlington Transistors 2011-10-05
Central Semiconductor C...	BSS50	94Kb / 2P	NPN SILICON DARLINGTON TRANSISTORS
Infineon Technologies A...	BSP50	120Kb / 8P	NPN Silicon Darlington Transistors 2007-03-30
Infineon Technologies A...	BCV27	76Kb / 8P	NPN Silicon Darlington Transistors 2007-04-20
Siemens Semiconductor G...	BD675	134Kb / 4P	NPN SILICON DARLINGTON TRANSISTORS
Siemens Semiconductor G...	BD861	111Kb / 4P	NPN SILICON DARLINGTON TRANSISTORS
ON Semiconductor	MPSA12	48Kb / 3P	Darlington Transistors NPN Silicon January, 2006 ??Rev. 1
Infineon Technologies A...	BCV29	47Kb / 5P	NPN Silicon Darlington Transistors Jul-12-2001
ON Semiconductor	BC618	150Kb / 6P	Darlington Transistors(NPN Silicon) 1996

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