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74FST6800DTR2 Fiches technique(PDF) 2 Page - ON Semiconductor |
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74FST6800DTR2 Fiches technique(HTML) 2 Page - ON Semiconductor |
2 / 6 page 74FST6800 http://onsemi.com 2 Figure 2. Logic Diagram 1 11 2 OE A9 A0 23 14 B9 B0 13 Bias V ORDERING INFORMATION Device Order Number Package Shipping† 74FST6800DW SOIC−24 48 Units / Rail 74FST6800DWR2 SOIC−24 2500 Units / Tape & Reel 74FST6800DT TSSOP−24* (Pb−Free) 96 Units / Rail 74FST6800DTR2 TSSOP−24* (Pb−Free) 2500 Units / Tape & Reel 74FST6800QS QSOP−24 96 Units / Rail 74FST6800QSR QSOP−24 2500 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. MAXIMUM RATINGS Symbol Parameter Value Unit VCC DC Supply Voltage *0.5 to )7.0 V VI DC Input Voltage *0.5 to )7.0 V VO DC Output Voltage *0.5 to )7.0 V IIK DC Input Diode Current VI t GND *50 mA IOK DC Output Diode Current VO t GND *50 mA IO DC Output Sink Current 128 mA ICC DC Supply Current per Supply Pin $100 mA IGND DC Ground Current per Ground Pin $100 mA TSTG Storage Temperature Range *65 to )150 °C TL Lead Temperature, 1 mm from Case for 10 Seconds 260 °C TJ Junction Temperature Under Bias )150 °C qJA Thermal Resistance SOIC TSSOP QSOP 125 170 200 °C/W MSL Moisture Sensitivity Level 1 FR Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in VESD ESD Withstand Voltage Human Body Model (Note 1) Machine Model (Note 2) Charged Device Model (Note 3) u2000 u200 N/A V ILatchup Latchup Performance Above VCC and Below GND at 85°C (Note 4) $500 mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Tested to EIA/JESD22−A114−A. 2. Tested to EIA/JESD22−A115−A. 3. Tested to JESD22−C101−A. 4. Tested to EIA/JESD78. |
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