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HN1B01FDW1T1 Fiches technique(PDF) 4 Page - ON Semiconductor

No de pièce HN1B01FDW1T1
Description  Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

HN1B01FDW1T1 Fiches technique(HTML) 4 Page - ON Semiconductor

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Typical Electrical Characteristics: NPN Transistor
Figure 7. Collector Saturation Voltage
01
2
3
4
6
5
280
0
40
VCE, COLLECTOR−EMITTER VOLTAGE (V)
80
120
160
Figure 8. DC Current Gain
1
10
100
1000
1000
10
IC, COLLECTOR CURRENT (mA)
100
TA = 25°C
6.0 mA
1.0 mA
IB = 0.2 mA
VCE = 1.0 V
TA = 100°C
−25
°C
25
°C
Figure 9. DC Current Gain
1
10
1000
100
1000
10
IC, COLLECTOR CURRENT (mA)
100
Figure 10. VCE(sat) versus IC
1
10
100
1000
1
0.01
IC, COLLECTOR CURRENT (mA)
0.1
IC/IB = 10
TA = 100°C
−25
°C
25
°C
TA = 100°C
−25
°C
25
°C
Figure 11. VBE(sat) versus IC
1
10
1000
100
10
0.1
IC, COLLECTOR CURRENT (mA)
1
Figure 12. Base−Emitter Voltage
0
0.1
10,000
VBE, BASE−EMITTER VOLTAGE (V)
0.1
COMMON EMITTER
VCE = 6 V
TA = 100°C
−25
°C
25
°C
TA = 25°C
IC/IB = 10
1
10
100
1000
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
5.0 mA
3.0 mA
200
240
2.0 mA
0.5 mA
VCE = 6.0 V


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