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HN1B01FDW1T1 Fiches technique(PDF) 3 Page - ON Semiconductor

No de pièce HN1B01FDW1T1
Description  Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

HN1B01FDW1T1 Fiches technique(HTML) 3 Page - ON Semiconductor

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Typical Electrical Characteristics: PNP Transistor
Figure 1. Collector Saturation Region
0−1
−2
−3
−4
−6
−5
−200
0
−40
VCE, COLLECTOR−EMITTER VOLTAGE (V)
−80
−120
−160
Figure 2. DC Current Gain
−1
−10
−100
−1000
1000
10
IC, COLLECTOR CURRENT (mA)
100
TA = 25°C
−2.0 mA
−1.5 mA
−1.0 mA
−0.5 mA
IB = −0.2 mA
VCE = −1.0 V
TA = 100°C
−25
°C
25
°C
Figure 3. DC Current Gain
−1
−10
−1000
−100
1000
10
IC, COLLECTOR CURRENT (mA)
100
Figure 4. VCE(sat) versus IC
−1
−10
−100
−1000
−1
−0.01
IC, COLLECTOR CURRENT (mA)
−0.1
IC/IB = 10
TA = 100°C
−25
°C
25
°C
TA = 100°C
−25
°C
25
°C
Figure 5. VBE(sat) versus IC
−1
−10
−1000
−100
−10
−0.1
IC, COLLECTOR CURRENT (mA)
−1
Figure 6. Base−Emitter Voltage
0
−0.1
−10,000
VBE, BASE−EMITTER VOLTAGE (V)
−0.1
COMMON EMITTER
VCE = 6 V
TA = 100°C
−25
°C
25
°C
TA = 25°C
IC/IB = 10
−1
−10
−100
−1000
−0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9
−1
VCE = −6.0 V


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