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HN1B01FDW1T1 Fiches technique(PDF) 2 Page - ON Semiconductor

No de pièce HN1B01FDW1T1
Description  Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

HN1B01FDW1T1 Fiches technique(HTML) 2 Page - ON Semiconductor

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Q1: PNP
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
V(BR)CEO
−50
Vdc
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
−60
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
−7.0
Vdc
Collector−Base Cutoff Current
(VCB = 45 Vdc, IE = 0)
ICBO
−0.1
mAdc
Collector−Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0, TA = 80°C)
ICEO
−0.1
−2.0
−1.0
mAdc
mAdc
mAdc
DC Current Gain (Note 1)
(VCE = 6.0 Vdc, IC = 2.0 mAdc)
hFE
−200
−400
Collector−Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
−0.15
−0.3
Vdc
Q2: NPN
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
V(BR)CEO
50
Vdc
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
7.0
Vdc
Collector−Base Cutoff Current
(VCB = 45 Vdc, IE = 0)
ICBO
0.1
mAdc
Collector−Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0, TA = 80°C)
ICEO
0.1
2.0
1.0
mAdc
mAdc
mAdc
DC Current Gain (Note 1)
(VCE = 6.0 Vdc, IC = 2.0 mAdc)
hFE
200
400
Collector−Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
0.15
0.25
Vdc
1. Pulse Test: Pulse Width
≤ 300 ms, D.C. ≤ 2%.


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