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DTA144TT1 Fiches technique(PDF) 2 Page - ON Semiconductor

No de pièce DTA144TT1
Description  Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

DTA144TT1 Fiches technique(HTML) 2 Page - ON Semiconductor

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DTA144TT1
http://onsemi.com
2
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Package
Shipping
DTA144TT1
6T
47
SC−59
3000/Tape & Reel
DTA144TT1G
6T
47
SC−59
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
100
nAdc
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
500
nAdc
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
0.2
mAdc
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
Vdc
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
Vdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
hFE
160
350
Collector−Emitter Saturation Voltage
(IC = 10 mA, IB = 1.0 mA)
VCE(sat)
0.25
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
VOL
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
VOH
4.9
Vdc
Input Resistor
R1
32.9
47
61.1
kW
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
Figure 1. Derating Curve
350
200
150
100
50
0
−50
0
50
100
150
TA, AMBIENT TEMPERATURE (5°C)
RqJA= 370°C/W
250
300


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