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BAV74LT1 Fiches technique(PDF) 2 Page - ON Semiconductor |
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BAV74LT1 Fiches technique(HTML) 2 Page - ON Semiconductor |
2 / 3 page BAV74LT1 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 5.0 mAdc) V(BR) 50 − Vdc Reverse Voltage Leakage Current, (Note 3) (VR = 50 Vdc, TJ = 125°C) (VR = 50 Vdc) IR − − 100 0.1 mAdc Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 2.0 pF Forward Voltage (IF = 100 mAdc) VF − 1.0 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, measured at IR = 1.0 mA, RL = 100 W) trr − 4.0 ns 3. For each individual diode while the second diode is unbiased. 100 0.2 0.4 VF, FORWARD VOLTAGE (VOLTS) 0.6 0.8 1.0 1.2 10 1.0 0.1 TA = 85°C 10 0 VR, REVERSE VOLTAGE (VOLTS) 1.0 0.1 0.01 0.001 10 20 30 40 50 1.0 0 VR, REVERSE VOLTAGE (VOLTS) 0.9 0.8 0.7 0.6 24 6 8 Figure 1. Forward Voltage Figure 2. Leakage Current Figure 3. Capacitance TA = −40°C TA = 25°C TA = 150°C TA = 125°C TA = 85°C TA = 55°C TA = 25°C Curves Applicable to Each Anode |
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