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BAS116LT1G Fiches technique(PDF) 1 Page - ON Semiconductor |
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BAS116LT1G Fiches technique(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2004 April, 2004 − Rev. 4 1 Publication Order Number: Devicenumber/D BAS116LT1 Preferred Device Switching Diode This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm Tape and Reel Use BAS116LT1 to order the 7 inch/3,000 unit reel • Pb−Free Package is Available MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg − 55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. SOT−23 (TO−236) CASE 318 STYLE 8 3 CATHODE 1 ANODE http://onsemi.com JV M Device Package Shipping† ORDERING INFORMATION BAS116LT1 SOT−23 3000 / Tape & Reel BAS116LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel MARKING DIAGRAM †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. JV = Specific Device Code M = Date Code Preferred devices are recommended choices for future use and best overall value. |
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