BAS16TT1G datasheet(1/6 Pages) ONSEMI

No de pièce	BAS16TT1G

Description	Silicon Switching Diode

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Fabricant	ONSEMI [ON Semiconductor]

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May, 2004 − Rev. 2

1

Publication Order Number:

BAS16TT1/D

BAS16TT1

Preferred Device

Silicon Switching Diode

Features

• Pb−Free Package is Available*

MAXIMUM RATINGS (TA = 25°C)

Rating

Symbol

Max

Unit

Continuous Reverse Voltage

VR

75

V

Recurrent Peak Forward Current

IF

200

mA

Peak Forward Surge Current

Pulse Width = 10

ms

IFM(surge)

500

mA

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation,

FR−4 Board (Note 1)

TA = 25°C

Derated above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient (Note 1)

RqJA

555

°C/W

Total Device Dissipation,

FR−4 Board (Note 2)

TA = 25°C

Derated above 25

°C

PD

360

2.9

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient (Note 2)

RqJA

345

°C/W

Junction and Storage

Temperature Range

TJ, Tstg

−55 to

+150

°C

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0

× 1.0 Inch Pad

http://onsemi.com

Device

Package

Shipping†

ORDERING INFORMATION

BAS16TT1

SOT−416

CASE 463

SOT−416

STYLE 2

3000 / Tape & Reel

MARKING DIAGRAM

A6

3

2

1

Preferred devices are recommended choices for future use

and best overall value.

3

CATHODE

1

ANODE

BAS16TT1G

SOT−416

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy

and soldering details, please download the

ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

Numéro de pièce similaire - BAS16TT1G

Fabricant	No de pièce	Fiches technique	Description
ON Semiconductor	BAS16TT1G	128Kb / 5P	Silicon Switching Diode October, 2010 -- Rev. 3
	BAS16TT1G	101Kb / 5P	Silicon Switching Diode May, 2013 ??Rev. 4
	BAS16TT1G	101Kb / 5P	Silicon Switching Diode May, 2013 ??Rev. 4

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