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BAS16LT3G Fiches technique(PDF) 1 Page - ON Semiconductor |
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BAS16LT3G Fiches technique(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 5 1 Publication Order Number: BAS16LT1/D BAS16LT1 Preferred Device Switching Diode Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. http://onsemi.com Preferred devices are recommended choices for future use and best overall value. Device Package Shipping† ORDERING INFORMATION BAS16LT1 SOT−23 3000/Tape & Reel SOT−23 CASE 318 STYLE 8 MARKING DIAGRAM 1 2 3 BAS16LT1G SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3 CATHODE 1 ANODE BAS16LT3G SOT−23 (Pb−Free) 10000/Tape & Reel BAS16LT3 SOT−23 10000/Tape & Reel 1 A6 M G A6 = Specific Device Code M = Date Code G = Pb−Free Package |
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