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ZXMP62M832 Fiches technique(PDF) 2 Page - Zetex Semiconductors |
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ZXMP62M832 Fiches technique(HTML) 2 Page - Zetex Semiconductors |
2 / 7 page ZXMP62M832 PROVISIONAL ISSUE A - MAY 2002 2 PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(f) RθJA 83.3 °C/W Junction to Ambient (b)(f) RθJA 51 °C/W Junction to Ambient (c)(f) RθJA 125 °C/W Junction to Ambient (d)(f) RθJA 111 °C/W Junction to Ambient (d)(g) RθJA 73.5 °C/W Junction to Ambient (e)(g) RθJA 41.7 °C/W THERMAL RESISTANCE Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW. PARAMETER SYMBOL P-Channel UNIT Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGS 12 V Continuous Drain Current@VGS=10V; TA=25 C (b)(f) @VGS=10V; TA=70 C (b)(f) @VGS=10V; TA=25 C (a)(f) ID -1.6 -1.3 -1.3 A A A Pulsed Drain Current IDM -5.6 A Continuous Source Current (Body Diode)(b)(f) IS -2.7 A Pulsed Source Current (Body Diode) ISM -5.6 A Power Dissipation at TA=25°C (a)(f) Linear Derating Factor PD 1.5 12 W mW/°C Power Dissipation at TA=25°C (b)(f) Linear Derating Factor PD 2.45 19.6 W mW/°C Power Dissipation at TA=25°C (c)(f) Linear Derating Factor PD 1 8 W mW/°C Power Dissipation at TA=25°C (d)(f) Linear Derating Factor PD 1.13 8 W mW/°C Power Dissipation at TA=25°C (d)(g) Linear Derating Factor PD 1.7 13.6 W mW/°C Power Dissipation at TA=25°C (e)(g) Linear Derating Factor PD 3 24 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS. |
Numéro de pièce similaire - ZXMP62M832 |
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Description similaire - ZXMP62M832 |
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