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2SA1020 Fiches technique(PDF) 2 Page - ON Semiconductor

No de pièce 2SA1020
Description  One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2SA1020 Fiches technique(HTML) 2 Page - ON Semiconductor

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2SA1020
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
50
Vdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
ICBO
1.0
mAdc
Emitter Cutoff Current
(VEB = 5.0 V, IC = 0)
IEBO
1.0
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.5 A, VCE = 2.0 V)
hFE
70
40
240
Collector −Emitter Saturation Voltage
(IC = 1.0 A, IB = 50 mA)
VCE(sat)
0.5
Vdc
Base −Emitter Saturation Voltage (IC = 1.0 A, IB = 50 mA)
VBE(sat)
1.2
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 3)
(IC = 500 mAdc, VCE = 2.0 Vdc, f = 100 MHz)
fT
100
MHz
1. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle = 2.0%.
2. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle = 2.0%.
3. fT is defined as the frequency at which |hfe| extrapolates to unity.
ORDERING INFORMATION
Device
Package
Shipping
2SA1020
TO−92
5000 Units / Box
2SA1020G
TO−92
(Pb−Free)
2SA1020RLRA
TO−92
2000 / Tape & Reel
2SA1020RLRAG
TO−92
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.


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