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STGW40NC60V Fiches technique(PDF) 3 Page - STMicroelectronics |
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STGW40NC60V Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 10 page 3/10 STGW40NC60V ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Table 8: Switching On 2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C) Table 9: Switching Off (3)Turn-off losses include also the tail of the collector current. Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(1) Forward Transconductance VCE = 15 V, IC= 20 A 20 S Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 25V, f = 1 MHz, VGE = 0 4550 350 105 pF pF pF Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 390 V, IC = 40 A, VGE = 15V, (see Figure 20) 214 30 96 nC nC nC ICL Turn-Off SOA Minimum Current Vclamp = 480 V , Tj = 150°C RG = 100 Ω, VGE= 15V 200 A Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Eon (2) Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses VCC = 390 V, IC = 40 A RG=3.3Ω, VGE= 15V, Tj= 25°C (see Figure 18) 43 17 2060 330 450 ns ns A/µs µJ td(on) tr (di/dt)on Eon (2) Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses VCC = 390 V, IC = 40 A RG=3.3Ω, VGE= 15V, Tj= 125°C (see Figure 18) 42 19 1900 640 ns ns A/µs µJ Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off Voltage Rise Time Vcc = 390 V, IC = 40 A, RGE = 3.3 Ω , VGE = 15 V TJ = 25 °C (see Figure 18) 25 ns td(off) Turn-off Delay Time 140 ns tf Current Fall Time 45 ns Eoff (3) Turn-off Switching Loss 720 970 µJ Ets Total Switching Loss 1050 1420 µJ tr(Voff) Off Voltage Rise Time Vcc = 390 V, IC = 40 A, RGE = 3.3 Ω , VGE = 15 V Tj = 125 °C (see Figure 18) 60 ns td(off) Turn-off Delay Time 170 ns tf Current Fall Time 77 ns Eoff (3) Turn-off Switching Loss 1400 µJ Ets Total Switching Loss 2040 µJ |
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