STGD3NB60SDT4 datasheet(2/9 Pages) STMICROELECTRONICS

No de pièce	STGD3NB60SDT4

Description	N-CHANNEL 3A - 600V - DPAK PowerMESH TM IGBT

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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STGD3NB60SD

2/9

ABSOLUTE MAXIMUM RATINGS

(q) Pulse width limited by safe operating area

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

Symbol

Parameter

Value

Unit

VCES

Collector-Emitter Voltage (VGS =0)

600

V

VGE

Gate-Emitter Voltage

± 20

V

IC

Collector Current (continuous) at TC =25°C

6A

IC

Collector Current (continuous) at TC = 100°C

3A

ICM ( )

Collector Current (pulsed)

25

A

PTOT

Total Dissipation at TC =25°C

48

W

Derating Factor

0.32

W/°C

Tstg

Storage Temperature

– 65 to 175

°C

Tj

Max. Operating Junction Temperature

175

°C

Rthj-case

Thermal Resistance Junction-case Max

3.125

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

100

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collectro-Emitter Breakdown

Voltage

IC = 250 µA, VGE = 0

600

V

ICES

Collector cut-off

(VGE =0)

VCE =Max Rating,TC =25 °C

10

µA

VCE =Max Rating,TC = 125 °C

100

µA

IGES

Gate-Emitter Leakage

Current (VCE =0)

VGE =±20V,VCE =0

±100

nA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGE(th)

Gate Threshold Voltage

VCE =VGE,IC = 250µA

2.5

4.5

V

VCE(sat)

Collector-Emitter Saturation

Voltage

VGE =15V, IC =1.5 A

VGE =15V, IC =3 A

VGE =15V,IC =7 A, TJ =125 °C

1

1.2

1.1

1.5

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs

Forward Transconductance

VCE =10V , IC =3 A

1.7

2.5

S

Cies

Input Capacitance

VCE = 25V,f= 1MHz,VGE =0

255

pF

Coes

Output Capacitance

30

pF

Cres

Reverse Transfer

Capacitance

5.6

pF

QG

QGE

QGC

Total Gate Charge

Gate-Emitter Charge

Gate-Collector Charge

VCE =480 V, IC =3A,

VGE =15V

18

5.4

5.5

23

nC

ICL

Latching Current

Vclamp = 380 V , Tj = 25°C

RG =1KΩ

15

A

Numéro de pièce similaire - STGD3NB60SDT4

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STGD3NB60SD	322Kb / 8P	N-CHANNEL 3A - 600V DPAK Power MESH IGBT

More results

Description similaire - STGD3NB60SDT4

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STGD3NB60HD	504Kb / 10P	N-CHANNEL 6A - 600V - DPAK PowerMESH TM IGBT
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	STGD6NC60H	454Kb / 14P	N-channel 600V - 7A - DPAK Very fast PowerMESH TM IGBT
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	STGB7NB60HD	322Kb / 8P	N-CHANNEL 7A - 600V DPAK PowerMESH IGBT
	STGB14NC60K	435Kb / 16P	N-channel 14A - 600V -DPAK - D2PAK Short circuit rated PowerMESH TM IGBT
	STGP3NB60F	732Kb / 14P	N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2PAK PowerMESH??IGBT
	STGP3NB60K	293Kb / 11P	N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMES TM IGBT

More results

STGD3NB60SDT4 Fiches technique(PDF) 2 Page - STMicroelectronics

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