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STGD10NC60KT4 Fiches technique(PDF) 3 Page - STMicroelectronics |
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3 / 17 page STGB10NC60K - STGP10NC60K - STGD10NC60K Electrical ratings 3/17 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGS = 0) 600 V IC (1) 1. Calculated according to the iterative formula: Collector current (continuous) at TC = 25°C 20 A IC (1) Collector current (continuous) at TC = 100°C 10 A ICM (2) 2. Pulse width limited by max junction temperature Collector current (pulsed) 30 A VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25°C 60 W Tstg Storage temperature – 55 to 150 °C Tj Operating junction temperature Tscw Short circuit withstand time 10 µs Tl Maximum lead temperature for soldering purpose (for 10sec. 1.6 mm from case) 300 °C Table 2. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case Max 2.08 °C/W Rthj-amb Thermal resistance junction-ambient Max 62.5 °C/W I C T C () T JMAX T C – R THJ C – V CESAT MAX () T C I C , () × ------------------------------------------------------------------------------------------------------ = |
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