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2N5457 Fiches technique(PDF) 2 Page - ON Semiconductor

No de pièce 2N5457
Description  JFETs ??General Purpose N?묬hannel ??Depletion
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N5457 Fiches technique(HTML) 2 Page - ON Semiconductor

  2N5457_06 Datasheet HTML 1Page - ON Semiconductor 2N5457_06 Datasheet HTML 2Page - ON Semiconductor 2N5457_06 Datasheet HTML 3Page - ON Semiconductor 2N5457_06 Datasheet HTML 4Page - ON Semiconductor 2N5457_06 Datasheet HTML 5Page - ON Semiconductor  
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2N5457, 2N5458
http://onsemi.com
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate − Source Breakdown Voltage
(IG = −10 mAdc, VDS = 0)
V(BR)GSS
−25
Vdc
Gate Reverse Current
(VGS = −15 Vdc, VDS = 0)
(VGS = −15 Vdc, VDS = 0, TA = 100°C)
IGSS
− 1.0
−200
nAdc
Gate−Source Cutoff Voltage
2N5457
(VDS = 15 Vdc, iD = 10 nAdc)
2N5458
VGS(off)
−0.5
−1.0
−6.0
−7.0
Vdc
Gate−Source Voltage
(VDS = 15 Vdc, iD = 100 mAdc)
2N5457
(VDS = 15 Vdc, iD = 200 mAdc)
2N5458
VGS
−2.5
−3.5
Vdc
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (Note 1)
2N5457
(VDS = 15 Vdc, VGS = 0)
2N5458
IDSS
1.0
2.0
3.0
6.0
5.0
9.0
mAdc
DYNAMIC CHARACTERISTICS
Forward Transfer Admittance (Note 1)
2N5457
(VDS = 15 Vdc, VGS = 0, f = 1 kHz)
2N5458
|Yfs|
1000
1500
3000
4000
5000
5500
mmhos
Output Admittance Common Source (Note 1)
(VDS = 15 Vdc, VGS = 0, f = 1 kHz)
|Yos|
10
50
mmhos
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1 kHz)
Ciss
4.5
7.0
pF
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1 kHz)
Crss
1.5
3.0
pF
1. Pulse Width
≤ 630 ms, Duty Cycle ≤ 10%.


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