Moteur de recherche de fiches techniques de composants électroniques |
|
STD65N55F3 Fiches technique(PDF) 4 Page - STMicroelectronics |
|
STD65N55F3 Fiches technique(HTML) 4 Page - STMicroelectronics |
4 / 13 page Electrical characteristics STD65N55F3 4/13 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown Voltage ID = 250µA, VGS= 0 55 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,Tc = 125°C 10 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20V ± 200 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 24 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 32A 8.0 10.5 m Ω Table 4. Dynamic Symbol Parameter Test conditions Min Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward transconductance VDS =25V, ID=32A 50 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1MHz, VGS=0 2200 500 25 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=27V, ID = 65A VGS =10V (see Figure 15) 33.5 12.5 9.5 45 nC nC nC |
Numéro de pièce similaire - STD65N55F3 |
|
Description similaire - STD65N55F3 |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |