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STP130NS04ZB Fiches technique(PDF) 4 Page - STMicroelectronics |
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STP130NS04ZB Fiches technique(HTML) 4 Page - STMicroelectronics |
4 / 16 page Electrical characteristics STP130NS04ZB-STB130NS04ZB-STW130NS04ZB-STB130NS04ZB-1 4/16 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 -40 < Tj < 175 °C 33 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 16 V,Tj = 25 °C VDS = 16 V,Tj = 125 °C 10 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±10 V, Tj = 25 °C 10 nA VGSS Gate-source breakdown voltage IGS= ± 100µA18 V VGS(th) Gate threshold voltage VDS = VGS = ID = 1 mA 2 4 V RDS(on) Static drain-source on resistance VGS = 10 V ,ID = 40 A 7 9 m Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS =15V, ID = 40A 50 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 2700 1275 285 pF pF pF td(on) tr Turn-on delay time Rise time VDD = 17.5 V, ID = 40 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13) 40 10 ns ns td(off) tf Turn-off delay time Fall time VDD = 17.5 V, ID = 40 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13) 220 100 ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=20V, ID = 80A VGS =10V (see Figure 14) 80 20 27 105 nC nC nC |
Numéro de pièce similaire - STP130NS04ZB |
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Description similaire - STP130NS04ZB |
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