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STP130NS04ZB Fiches technique(PDF) 4 Page - STMicroelectronics

No de pièce STP130NS04ZB
Description  N-channel clamped - 7 mOHM - 80A TO-220/I2/D2PAK/TO-247 Fully protected mesh overlay TM MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP130NS04ZB Fiches technique(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STP130NS04ZB-STB130NS04ZB-STW130NS04ZB-STB130NS04ZB-1
4/16
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS = 0
-40 < Tj < 175 °C
33
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 16 V,Tj = 25 °C
VDS = 16 V,Tj = 125 °C
10
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±10 V,
Tj = 25 °C
10
nA
VGSS
Gate-source breakdown
voltage
IGS= ± 100µA18
V
VGS(th)
Gate threshold voltage
VDS = VGS = ID = 1 mA
2
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V ,ID = 40 A
7
9
m
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS =15V, ID = 40A
50
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
2700
1275
285
pF
pF
pF
td(on)
tr
Turn-on delay time
Rise time
VDD = 17.5 V, ID = 40 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13)
40
10
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD = 17.5 V, ID = 40 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13)
220
100
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=20V, ID = 80A
VGS =10V
(see Figure 14)
80
20
27
105
nC
nC
nC


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