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2STR2230 Fiches technique(PDF) 4 Page - STMicroelectronics

No de pièce 2STR2230
Description  Low voltage fast-switching PNP power transistor
Download  9 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

2STR2230 Fiches technique(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
2STR2230
4/9
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Note (2) Pulsed duration = 300
µs, duty cycle ≤1.5%
Table 3.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE =0)
VCB = -30V
-0.1
µA
IEBO
Emitter cut-off current
(IC =0)
VEB = -4V
-0.1
µA
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
IC = -100µA
-30
V
V(BR)CEO (2)
Collector-emitter
breakdown voltage
(IB = 0)
IC = -10mA
-30
V
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE = -100µA
-5
V
VCE(sat) (2) Collector-emitter
saturation voltage
IC = -0.1A
IB = -1mA
IC = -1A
IB = -100mA
IC = -2A
IB = -200mA
-0.25
-0.42
-0.17
-0.45
-0.8
V
V
V
VBE(sat) (2)
Base-emitter saturation
voltage
IC = -1A
IB = -100mA
-0.9
-1.25
V
hFE (2)
DC current gain
IC = -50mA
VCE = -2V
IC = -0.5A
VCE = -2V
IC = -1A
VCE = -2V
IC = -1.5A
VCE = -2V
210
170
100
70
280
560
fT
Transition frequency
IC = -0.1A
VCE = -5V
f = 100MHz
100
MHz
CCBO
Collector-base
capacitance
IE = 0
VCB = -10V
f = 1MHz
10
pF
ton
toff
Resistive load
Turn-on time
Turn-off time
IC = -1.5A
VCC = -10V
IB1 = -IB2 = -150mA
74
200
ns
ns


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